? 2012 f a i r c h i l d s e m i c ondu c t or co r po r a t i on f d s 4465 r e v c2 ( w ) fds4465 p-channel 1.8v specified powertrench ? ?? ? mosfet general description this p-channel 1.8v specified mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications with a wide range of gate drive voltage (1.8v ? 8v). applications ? power management ? load switch ? battery protection features ? ?13.5 a, ?20 v. r ds(on) = 8.5 m ? @ v gs = ?4.5 v r ds(on) = 10.5 m ? @ v gs = ?2.5 v r ds(on) = 14 m ? @ v gs = ?1.8 v ? fast switching speed ? high performance trench technology for extremely low r ds(on) ? high current and power handling capability s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?13.5 a ? pulsed ?50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.5 p d (note 1c) 1.2 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r ja thermal resistance, junction-to-ambient (note 1c) 125 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity fds4465 fds4465 13?? 12mm 2500 units fds4465 decembe r 20 12
f d s 4465 r e v c 2 ( w ) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?12 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.6 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?13.5 a v gs = ?2.5 v, i d = ?12 a v gs = ?1.8 v, i d = ?10.5 a v gs =?4.5 v, i d =?13.5a, t j =125 c 6.7 8.0 9.8 9.0 8.5 10.5 14 13 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?50 a g fs forward transconductance v ds = ?5 v, i d = ?13.5 a 70 s dynamic characteristics c iss input capacitance 8237 pf c oss output capacitance 1497 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz switching characteristics (note 2) t d(on) turn?on delay time 20 36 ns t r turn?on rise time 24 38 ns t d(off) turn?off delay time 300 480 ns t f turn?off fall time v dd = ?10v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 140 224 ns q g total gate charge 86 120 nc q gs gate?source charge 20 nc q gd gate?drain charge v ds = ?10 v, i d = ?13.5 a, v gs = ?4.5 v 11 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.1 a (note 2) ?0.6 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50 c/w when mounted on a 1in 2 pad of 2 oz copper b) 105 c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125 c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fds4465 r g gate resistance 750 pf 0.1 3.0 6.0
f d s 4465 r e v c 2 ( w ) typical characteristics 0 10 20 30 40 50 00.511.5 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -2.5v -2.0v -1.8v -1.5v 0.6 1 1.4 1.8 2.2 2.6 3 0 1020304050 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -1.5v -4.5v -2.0v -2.5v -1.8v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -13.5a v gs = -10v 0 0.005 0.01 0.015 0.02 0.025 012345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -6.3a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 00.511.52 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5.0v 0.0001 0.001 0.01 0.1 1 10 100 00.20.40.60.811.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds4465
f d s 4465 r e v c 2 ( w ) typical characteristics 0 1 2 3 4 5 0 20406080100 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -13.5a v ds = -5v -10v -15v 0 2000 4000 6000 8000 10000 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms 100 s r ds(on) limit v gs = -4.5v single pulse r ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 125 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds4465
t rademarks t he following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. d i sclaimer fairchil d semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. li fe support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product s t atus definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? du al cool? ecospark ? ef ficent max? esbc? fairchild ? f a irchild semiconductor ? f a ct quiet series? fact ? fa st ? f a stvcore? fetbench? flashwriter ? * fp s? f-pfs? frfet ? gl obal po wer resource sm gr een bri dge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? op topla nar ? p o wertrench ? pow erxs? programmable active droop? qfet ? qs ? qu iet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? s t ealth? superfet ? s upe rsot?-3 supersot?-6 supersot?-8 supremos ? syn cf et? sync-lock? ?* the power franchise ? ? tinyboo s t? tinybuck? tinycalc? tinylogic ? ti nyopto ? tinypower? tinypwm? tinywire? transic ? trifault dete c t? truecurrent ? * serde s ? uhc ? ult r a frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? dat a sheet identification product status definition advance information formative / in design datasheet contains the desi gn specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeit ing policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . cou n terfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems su ch as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. re v. i6 1 ? fds4465
|
